US 11,699,719 B2
Imaging element, stacked imaging element, and solid-state imaging device
Fumihiko Koga, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on May 5, 2021, as Appl. No. 17/308,455.
Application 17/308,455 is a continuation of application No. 16/499,916, granted, now 11,037,979, previously published as PCT/JP2018/005955, filed on Feb. 20, 2018.
Claims priority of application No. 2017-078236 (JP), filed on Apr. 11, 2017.
Prior Publication US 2021/0280629 A1, Sep. 9, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14647 (2013.01) [H01L 27/14607 (2013.01); H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a semiconductor substrate;
a first photoelectric conversion section disposed above the semiconductor substrate, the first photoelectric conversion section comprising:
a first electrode;
a second electrode; and
a first photoelectric conversion layer disposed between the first electrode and the second electrode; and
a second photoelectric conversion section disposed above the first photoelectric conversion section, the second photoelectric conversion section comprising:
a third electrode;
a fourth electrode;
a second photoelectric conversion layer disposed between the third electrode and the fourth electrode; and
a first transistor electrically coupled to one of the third electrode and the fourth electrode.