US 11,699,718 B2
Semiconductor image sensor
Wei-Chieh Chiang, Changhua County (TW); Keng-Yu Chou, Kaohsiung (TW); Chun-Hao Chuang, Hsinchu (TW); Wen-Hau Wu, New Taipei (TW); Jhy-Jyi Sze, Hsin-Chu (TW); Chien-Hsien Tseng, Hsinchu (TW); and Kazuaki Hashimoto, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 7, 2021, as Appl. No. 17/315,185.
Application 17/315,185 is a continuation of application No. 16/714,309, filed on Dec. 13, 2019, granted, now 11,004,887.
Application 16/714,309 is a continuation of application No. 16/101,211, filed on Aug. 10, 2018, granted, now 10,510,797, issued on Dec. 17, 2019.
Claims priority of provisional application 62/579,493, filed on Oct. 31, 2017.
Prior Publication US 2021/0265414 A1, Aug. 26, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14645 (2013.01) [H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 27/14632 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor disposed in the substrate; and the pixel sensor comprising a plurality of first micro structures disposed over the back side of the substrate; and
a color filter disposed over the pixel sensor, and the color filter comprising a plurality of second micro structures disposed over the back side of the substrate,
wherein the first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.