US 11,699,711 B2
Image sensing device
Ha Neul Yoo, Icheon-si (KR); and Yun Hui Yang, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Sep. 10, 2020, as Appl. No. 17/16,777.
Claims priority of application No. 10-2020-0041574 (KR), filed on Apr. 6, 2020.
Prior Publication US 2021/0313371 A1, Oct. 7, 2021
Int. Cl. H01L 29/04 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14627 (2013.01) 19 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a semiconductor substrate structured to include a pixel region, which includes a plurality of unit pixels, and a pixel-array peripheral region located outside of and peripheral to the pixel region;
a material layer disposed over the semiconductor substrate in the pixel region and the pixel-array peripheral region, and structured to include a first trench extending to a predetermined depth in the pixel-array peripheral region;
a lens layer disposed over the material layer in the pixel region and structured as a lens for collecting incident light into a unit pixel in the pixel region; and
a lens capping layer disposed over the lens layer and the material layer and structured to include an edge region formed to fill the first trench.