CPC H01L 27/0922 (2013.01) [H01L 21/8258 (2013.01); H01L 27/0883 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/66969 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01)] | 20 Claims |
1. An apparatus comprising:
a first device comprising an enhancement mode III-N heterostructure field effect transistor (HFET);
a second device over the first device, wherein the second device comprises a depletion mode thin film transistor, wherein the second device includes a layer comprising an oxide semiconductor extending laterally from a source terminal of the second device to a drain terminal of the second device, and a gate stack coupled to the layer; and
a connector to couple a source terminal of the first device to the drain terminal of the second device, or couple a drain terminal of the first device to the source terminal of the second device.
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