US 11,699,700 B2
Integrated circuit device including metal-oxide semiconductor transistors
Jinhyeok Song, Incheon (KR); and Mingeun Song, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 12, 2021, as Appl. No. 17/199,720.
Claims priority of application No. 10-2020-0114870 (KR), filed on Sep. 8, 2020.
Prior Publication US 2022/0077143 A1, Mar. 10, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 23/544 (2006.01); H01L 23/66 (2006.01)
CPC H01L 27/088 (2013.01) [H01L 23/544 (2013.01); H01L 23/66 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
an active region;
an active cutting region at a side of the active region in a first direction, the active cutting region separating the active region into separate parts;
a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region;
a plurality of gate patterns spaced apart from each other in the first direction, the plurality of gate patterns extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the plurality of gate patterns not being in the active cutting region; and
a conductive isolated gate contact region in contact with the plurality of gate patterns outside of the active region, the conductive isolated gate contact region electrically connecting two gate patterns of the plurality of gate patterns to each other.