CPC H01L 24/94 (2013.01) [H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/3114 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/96 (2013.01); H01L 21/568 (2013.01); H01L 23/3185 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0331 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05561 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/94 (2013.01); H01L 2224/96 (2013.01)] | 24 Claims |
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a contact pad formed over a first surface of the semiconductor wafer;
forming a trench into the first surface of the semiconductor wafer;
disposing an insulating material over the first surface of the semiconductor wafer and into the trench, wherein the insulating material covers the contact pad;
grinding the insulating material over the first surface of the semiconductor wafer to expose the contact pad;
backgrinding a second surface of the semiconductor wafer opposite the first surface to expose the insulating material in the trench;
forming an insulating layer over the second surface of the semiconductor wafer after backgrinding, wherein the insulating layer includes an adhesive tape; and
dicing the semiconductor wafer through the trench and insulating layer.
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7. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a contact pad formed over a first surface of the semiconductor wafer;
forming a trench into the first surface of the semiconductor wafer;
disposing an insulating material over the first surface of the semiconductor wafer and into the trench, wherein the insulating material covers the contact pad;
grinding the insulating material over the first surface of the semiconductor wafer to expose the contact pad; and
forming a conductive layer over the contact pad after grinding the insulating material, wherein a discrete portion of the conductive layer is limited to within a footprint of the contact pad.
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13. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a contact pad;
forming a trench into the semiconductor wafer;
disposing an insulating material over the semiconductor wafer and into the trench;
grinding the insulating material to expose the contact pad;
forming a conductive layer over the contact pad after grinding the insulating material;
forming an insulating layer to cover an entire footprint of the semiconductor wafer opposite the contact pad; and
singulating the semiconductor wafer through the insulating material and insulating layer.
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19. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a contact pad;
forming a trench into the semiconductor wafer;
disposing an insulating material over the semiconductor wafer and into the trench with the contact pad exposed from the insulating material;
backgrinding the semiconductor wafer to expose the insulating material in the trench and form a back surface of the semiconductor wafer;
forming an insulating layer over and completely covering the back surface of the semiconductor wafer; and
singulating the semiconductor wafer through the insulating material and insulating layer.
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