CPC H01L 23/5283 (2013.01) [H01L 22/34 (2013.01); H01L 23/5226 (2013.01)] | 14 Claims |
1. A semiconductor device, comprising:
a substrate;
a test transistor over the substrate; and
multi-level metal interconnections formed over the substrate and spaced apart from each other and from the test transistor in a vertical direction from the substrate; and
contacts for connecting the metal interconnections,
wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection, and
wherein the contacts do not overlap with each other,
wherein at least the lowest-level metal interconnection among the multi-level metal interconnections is a spiral metal interconnection.
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