US 11,699,658 B2
Semiconductor device with metal interconnection
Eunsung Lee, Seoul (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jun. 1, 2020, as Appl. No. 16/889,467.
Claims priority of application No. 10-2019-0178435 (KR), filed on Dec. 30, 2019.
Prior Publication US 2021/0202383 A1, Jul. 1, 2021
Int. Cl. H01F 5/00 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/66 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 22/34 (2013.01); H01L 23/5226 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a test transistor over the substrate; and
multi-level metal interconnections formed over the substrate and spaced apart from each other and from the test transistor in a vertical direction from the substrate; and
contacts for connecting the metal interconnections,
wherein at least one metal interconnection among the multi-level metal interconnections is a spiral metal interconnection, and
wherein the contacts do not overlap with each other,
wherein at least the lowest-level metal interconnection among the multi-level metal interconnections is a spiral metal interconnection.