US 11,699,640 B2
Power semiconductor module for PCB embedding, power electronic assembly having a power module embedded in a PCB, and corresponding methods of production
Thomas Stoek, Buxtehude (DE); Frank Daeche, Unterhaching (DE); and Chee Voon Tan, Seremban (MY)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 21, 2021, as Appl. No. 17/353,047.
Prior Publication US 2022/0406692 A1, Dec. 22, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H05K 1/18 (2006.01); H05K 3/00 (2006.01)
CPC H01L 23/49537 (2013.01) [H01L 21/4825 (2013.01); H01L 21/4842 (2013.01); H01L 23/49524 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H05K 1/185 (2013.01); H01L 23/49513 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/32 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83385 (2013.01); H01L 2224/83815 (2013.01); H05K 3/0035 (2013.01); H05K 3/0038 (2013.01); H05K 3/0047 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of batch producing power modules, the method comprising:
applying a first solder paste to substrate sections of a leadframe structure, wherein each substrate section belongs to a different one of the power modules;
placing a power semiconductor die on the first solder paste of each substrate section, each power semiconductor die having a first load terminal and a control terminal at a first side that faces away from the leadframe structure and a second load terminal contacting the first solder paste at a second side opposite the first side;
applying a second solder paste to the first load terminal and the control terminal of each power semiconductor die;
vertically aligning a metal clip frame with the leadframe structure, the metal clip frame comprising a first metal clip vertically aligned with the first load terminal of each power semiconductor die and a second metal clip vertically aligned with the control terminal of each power semiconductor die;
pressing the metal clip frame toward the leadframe structure in a pressing direction, wherein a hard stop feature prevents further pressing when the hard stop feature is engaged;
reflowing the first solder paste and the second solder paste to form a first soldered joint between each first metal clip and the corresponding first load terminal of each power semiconductor die, a second soldered joint between each second metal clip and the corresponding control terminal of each power semiconductor die, and a third soldered joint between the second load terminal of each power semiconductor die and the corresponding substrate section of the leadframe structure; and
severing connections to the leadframe structure and to the metal clip frame, to form individual power modules.