US 11,699,621 B2
Method for patterning a lanthanum containing layer
Kun-Yu Lee, Tainan (TW); Huicheng Chang, Tainan (TW); Che-Hao Chang, Hsinchu (TW); Ching-Hwanq Su, Tainan (TW); Weng Chang, Hsinchu (TW); and Xiong-Fei Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 8, 2021, as Appl. No. 17/521,374.
Application 16/569,820 is a division of application No. 15/937,472, filed on Mar. 27, 2018, granted, now 10,504,795, issued on Dec. 10, 2019.
Application 17/521,374 is a continuation of application No. 16/569,820, filed on Sep. 13, 2019, granted, now 11,171,061.
Prior Publication US 2022/0059412 A1, Feb. 24, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01)
CPC H01L 21/823857 (2013.01) [H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02192 (2013.01); H01L 21/28185 (2013.01); H01L 21/3115 (2013.01); H01L 21/31111 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor having a first active region, the first transistor comprising a first gate structure, the first gate structure comprising:
a first high-k dielectric layer over a portion of the first active region, the first high-k dielectric layer being substantially free of lanthanum; and
a first gate electrode over the first high-k dielectric layer; and
a second transistor having a second active region, the second transistor comprising a second gate structure, the second gate structure comprising:
a second high-k dielectric layer over a portion of the second active region, the second high-k dielectric layer comprising lanthanum, wherein a ratio of lanthanum to titanium in the second high-k dielectric layer is greater than about 50; and
a second gate electrode over the second high-k dielectric layer.