CPC H01L 21/6715 (2013.01) [H01L 21/67109 (2013.01); H01L 21/68707 (2013.01); H01L 21/68742 (2013.01)] | 20 Claims |
1. An apparatus for treating a substrate, the apparatus comprising:
a chamber having a treating space formed therein;
a substrate support unit configured to support the substrate in the treating space;
a plate located to face the substrate support unit in the treating space, the plate having a plurality of holes formed therein;
a gas supply unit configured to supply gas into the treating space through the holes; and
a gas exhaust unit configured to exhaust the gas in the treating space through the holes,
wherein the plate has a plurality of first exhaust holes and a plurality of first supply holes formed in a central area thereof, the first exhaust holes being configured to exhaust the gas in an intervening space between the plate and the substrate support unit, and the first supply holes being surrounded by the first exhaust holes and configured to supply the gas into the intervening space, and
wherein the plate has a plurality of second supply holes formed outside the central area thereof, the second supply holes being configured to supply the gas into the intervening space.
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