US 11,699,584 B2
Si-containing film forming precursors and methods of using the same
Jean-Marc Girard, Versailles (FR); Peng Zhang, Montvale, NJ (US); Antonio Sanchez, Tsukuba (JP); Manish Khandelwal, Somerset, NJ (US); Gennadiy Itov, Flemington, NJ (US); and Reno Pesaresi, Easton, NJ (US)
Assigned to L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges Claude, Paris (FR)
Filed by L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris (FR)
Filed on Mar. 10, 2021, as Appl. No. 17/197,895.
Application 17/197,895 is a continuation of application No. 16/513,307, filed on Jul. 16, 2019, abandoned.
Application 16/513,307 is a continuation of application No. 15/692,544, filed on Aug. 31, 2017, granted, now 10,403,494.
Application 15/692,544 is a continuation of application No. 14/738,039, filed on Jun. 12, 2015, granted, now 9,777,025.
Claims priority of provisional application 62/140,248, filed on Mar. 30, 2015.
Prior Publication US 2021/0225635 A1, Jul. 22, 2021
Int. Cl. H01L 21/02 (2006.01); C07F 7/02 (2006.01); C01B 21/087 (2006.01); C01B 21/088 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/515 (2006.01)
CPC H01L 21/0228 (2013.01) [C01B 21/087 (2013.01); C01B 21/088 (2013.01); C07F 7/025 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/515 (2013.01); H01L 21/02222 (2013.01); H01L 21/02164 (2013.01)] 18 Claims
 
1. An atomic layer deposition (ALD) silicon metal oxide film formation process, the process comprising depositing a silicon metal oxide film on a substrate by the steps of:
a) a step of sequentially introducing a vapor of a mono-substituted trisilylamine (TSA) precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X,
wherein X is selected from (i) a halogen atom selected from Cl, Br or I; (ii) an isocyanato group [—NCO]; (iii) an amino group [—NR1 R2]; (iv) an N-containing C4-C10 saturated or unsaturated heterocycle; or (v) an alkoxy group [—O—R], and
wherein R1, R2 and R each is selected from (x) H; (y) a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group; or (z) a silyl group [SiR′3] with each R′ being independently selected from H; a halogen atom selected from Cl, Br, I; a Ci-C4 saturated or unsaturated hydrocarbyl group; a C1-C4 saturated or unsaturated alkoxy group; or an amino group [—NR3R4] with each R3 and R4 being selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group; and
further provided that if R1═H, then R2≠H or Me, and
b) a step of introducing a vapor of a metal containing second precursor.