CPC H01L 21/0228 (2013.01) [C01B 21/087 (2013.01); C01B 21/088 (2013.01); C07F 7/025 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/515 (2013.01); H01L 21/02222 (2013.01); H01L 21/02164 (2013.01)] | 18 Claims |
1. An atomic layer deposition (ALD) silicon metal oxide film formation process, the process comprising depositing a silicon metal oxide film on a substrate by the steps of:
a) a step of sequentially introducing a vapor of a mono-substituted trisilylamine (TSA) precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X,
wherein X is selected from (i) a halogen atom selected from Cl, Br or I; (ii) an isocyanato group [—NCO]; (iii) an amino group [—NR1 R2]; (iv) an N-containing C4-C10 saturated or unsaturated heterocycle; or (v) an alkoxy group [—O—R], and
wherein R1, R2 and R each is selected from (x) H; (y) a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group; or (z) a silyl group [SiR′3] with each R′ being independently selected from H; a halogen atom selected from Cl, Br, I; a Ci-C4 saturated or unsaturated hydrocarbyl group; a C1-C4 saturated or unsaturated alkoxy group; or an amino group [—NR3R4] with each R3 and R4 being selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group; and
further provided that if R1═H, then R2≠H or Me, and
b) a step of introducing a vapor of a metal containing second precursor.
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