US 11,699,570 B1
System and method for hi-precision ion implantation
Supakit Charnvanichborikarn, Gloucester, MA (US); Wei Zou, Lexington, MA (US); Hans-Joachim L. Gossmann, Summit, NJ (US); Qintao Zhang, Mt Kisco, NY (US); Aseem Kumar Srivastava, Andover, MA (US); William Robert Bogiages, Jr., Danvers, MA (US); and Wei Zhao, Lexington, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 7, 2022, as Appl. No. 17/665,970.
Int. Cl. H01J 37/317 (2006.01); H01J 37/304 (2006.01)
CPC H01J 37/3171 (2013.01) [H01J 37/304 (2013.01); H01J 2237/31705 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A beam-line ion implanter comprising:
an ion source for generating an ion beam;
an end station comprising:
a platen for supporting a substrate to be implanted by the ion beam;
a scanner for moving the platen in a controllable manner; and
metrology components for analyzing the substrate;
a main controller operatively coupled to the ion source, the scanner, and the metrology components and adapted to control operation of the ion source, the scanner, and the metrology components; and
a feedforward controller operatively coupled to the main controller and the metrology components, the feed forward controller adapted to process information received from the metrology components using a predictive model to influence operation of the main controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations.