CPC H01J 37/3171 (2013.01) [H01J 37/304 (2013.01); H01J 2237/31705 (2013.01)] | 20 Claims |
1. A beam-line ion implanter comprising:
an ion source for generating an ion beam;
an end station comprising:
a platen for supporting a substrate to be implanted by the ion beam;
a scanner for moving the platen in a controllable manner; and
metrology components for analyzing the substrate;
a main controller operatively coupled to the ion source, the scanner, and the metrology components and adapted to control operation of the ion source, the scanner, and the metrology components; and
a feedforward controller operatively coupled to the main controller and the metrology components, the feed forward controller adapted to process information received from the metrology components using a predictive model to influence operation of the main controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations.
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