US 11,699,569 B2
Ion implanter and particle detection method
Aki Ninomiya, Ehime (JP); Takanori Yagita, Ehime (JP); Takao Morita, Ehime (JP); and Sayumi Hirose, Kanagawa (JP)
Assigned to SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD., Tokyo (JP)
Filed by SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD., Tokyo (JP)
Filed on Sep. 23, 2021, as Appl. No. 17/483,293.
Claims priority of application No. 2020-160485 (JP), filed on Sep. 25, 2020.
Prior Publication US 2022/0102112 A1, Mar. 31, 2022
Int. Cl. H01J 37/317 (2006.01); H01J 37/22 (2006.01); H01J 37/304 (2006.01)
CPC H01J 37/3171 (2013.01) [H01J 37/222 (2013.01); H01J 37/304 (2013.01); H01J 2237/20207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An ion implanter comprising:
a beamline unit that transports an ion beam;
an implantation processing chamber in which implantation processing is performed to irradiate a wafer with the ion beam;
an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber;
an imaging device that generates a captured image captured by imaging a space through which the illumination light passes; and
a control device that detects a particle which scatters the illumination light, based on the captured image.