CPC G11C 16/3459 (2013.01) [G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 2216/16 (2013.01)] | 20 Claims |
1. A method for programming a memory block of a non-volatile memory structure, comprising:
during a program verify operation:
selecting only a partial segment of memory cells of a memory block for bit scan mode;
applying a sensing bias voltage to one or more bit lines of the memory block associated with the selected memory cells; and
initiating a bit scan mode of the selected memory cells.
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