US 11,699,490 B2
Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device including the same
Soyeong Gwak, Hwaseong-si (KR); Raeyoung Lee, Suwon-si (KR); Jinkyu Kang, Seoul (KR); Sejun Park, Yongin-si (KR); Changhwan Shin, Hwaseong-si (KR); Jaeduk Lee, Seongnam-si (KR); and Woojae Jang, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 1, 2021, as Appl. No. 17/220,218.
Claims priority of application No. 10-2020-0102475 (KR), filed on Aug. 14, 2020.
Prior Publication US 2022/0051727 A1, Feb. 17, 2022
Int. Cl. G11C 16/34 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 7/10 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01)
CPC G11C 16/16 (2013.01) [G11C 7/106 (2013.01); G11C 7/1087 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An operating method of a storage device, the method comprising:
reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device;
selecting an operation mode corresponding to the wear-out pattern using the controller; and
transmitting the operation mode to the non-volatile memory device using the controller.