CPC G11C 11/5628 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 11/5635 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/30 (2013.01)] | 13 Claims |
1. A nonvolatile memory device comprising:
a plurality of memory blocks, each of the plurality of memory blocks including a plurality of memory cells that are connected to a plurality of word lines and include a monitoring cell and a plurality of data cells,
wherein the nonvolatile memory device is configured such that a first program is performed on the plurality of data cells, and a detection program is performed on the monitoring cell,
wherein a maximum value of a first threshold voltage of the monitoring cell after the detection program is performed on the monitoring cell is greater than a maximum value of a second threshold voltage of the monitoring cell before the detection program is performed on the monitoring cell,
wherein the nonvolatile memory device is configured such that a detection voltage for reading the monitoring cell is greater than the maximum value of the second threshold voltage,
wherein the nonvolatile memory device is configured such that the plurality of data cells is evaluated using a plurality of read voltages, and
wherein the detection voltage is different from the plurality of read voltages.
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