US 11,699,479 B2
Nonvolatile memory apparatus for generating read reference and an operating method of the nonvolatile memory apparatus
Moo Hui Park, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 21, 2021, as Appl. No. 17/353,361.
Claims priority of application No. 10-2020-0132521 (KR), filed on Oct. 14, 2020.
Prior Publication US 2022/0115055 A1, Apr. 14, 2022
Int. Cl. G11C 8/08 (2006.01); G11C 11/4091 (2006.01); G11C 11/408 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01); G11C 11/4099 (2006.01)
CPC G11C 11/4091 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 11/4099 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A nonvolatile memory apparatus comprising:
a control circuit configured to apply a read voltage across a target memory cell by applying a first read boundary voltage to a selected global bit line and by applying a second read boundary voltage to a selected global word line;
a sense amplifier configured to generate an output signal by comparing voltage levels of the selected global word line and an unselected global word line that is not coupled to the target memory cell; and
a reference generator configured to change the voltage level of the unselected global word line by charging and discharging a capacitor that is coupled to the unselected global word line.