CPC G11C 11/1675 (2013.01) [G01R 33/093 (2013.01); G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02)] | 20 Claims |
1. A magnetic memory device comprising:
a first magnetic tunnel junction (MTJ) stack;
a first spin-orbit torque (SOT) induction wiring disposed on the first MTJ stack;
a first wiring coupled to a first end of the first SOT induction wiring; and a first portion of a selector layer coupled to a second end of the first SOT induction wiring and a second portion of the selector layer coupled to a second end of a second SOT induction wiring, the selector layer extending continuously between the first portion and the second portion.
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