CPC G09G 3/3225 (2013.01) [G09G 2300/0876 (2013.01); G09G 2310/08 (2013.01)] | 14 Claims |
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor;
an eighth transistor;
a ninth transistor;
a tenth transistor;
a first capacitor;
a second capacitor;
a third capacitor; and
a fourth capacitor,
wherein a first gate of the first transistor is electrically connected to a first gate of the fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the eighth transistor, and a first terminal of the fourth capacitor,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a first gate of the sixth transistor and a first terminal of the second capacitor,
wherein the other of the source and the drain of the eighth transistor is electrically connected to a first gate of the ninth transistor and a first terminal of the third capacitor,
wherein a first gate of the second transistor is electrically connected to a first terminal of the first capacitor, one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, a first gate of the seventh transistor, and a first gate of the tenth transistor,
wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and
wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.
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