US 11,699,091 B2
Qubit circuits with deep, in-substrate components
Wayne Woods, Burlington, MA (US); Danna Rosenberg, Arlington, MA (US); Cyrus Hirjibehedin, Newton, MA (US); Donna-Ruth Yost, Action, MA (US); Justin Mallek, Burlington, MA (US); Andrew Kerman, Arlington, MA (US); Mollie Schwartz, Cambridge, MA (US); Jonilyn Yoder, Billerica, MA (US); William Oliver, Arlington, MA (US); and Thomas Hazard, Cambridge, MA (US)
Assigned to Massachusetts Institute of Technology, Cambridge, MA (US)
Filed by Massachusetts Institute of Technology, Cambridge, MA (US)
Filed on Jan. 4, 2021, as Appl. No. 17/140,741.
Claims priority of provisional application 62/984,061, filed on Mar. 2, 2020.
Prior Publication US 2022/0121978 A1, Apr. 21, 2022
Int. Cl. G06N 10/00 (2022.01); H10N 60/82 (2023.01); H10N 60/81 (2023.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01)
CPC G06N 10/00 (2019.01) [H10N 60/815 (2023.02); H10N 60/82 (2023.02); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A qubit for preparing quantum states for quantum computing, the qubit comprising:
a substrate;
a circuit element formed, at least in part, from a first superconducting material patterned on the substrate; and
a first conductor electrically connected to the circuit element and deposited in a first cavity extending into the substrate, the first cavity having an aspect ratio between 5:1 and 100:1, wherein the aspect ratio is a ratio of a depth of the first cavity into the substrate to a smallest transverse dimension of the first cavity.