US 11,697,272 B2
Laminated glass
Shunsuke Sadakane, Tokyo (JP); Shoichi Takeuchi, Tokyo (JP); Hideo Tsuboi, Tokyo (JP); Kazuhiko Niwano, Tokyo (JP); Nobutaka Kidera, Tokyo (JP); and Ryota Okuda, Tokyo (JP)
Assigned to AGC INC., Tokyo (JP)
Filed by AGC Inc., Tokyo (JP)
Filed on May 17, 2022, as Appl. No. 17/746,630.
Application 17/746,630 is a continuation of application No. PCT/JP2020/043068, filed on Nov. 18, 2020.
Claims priority of application No. 2019-211080 (JP), filed on Nov. 22, 2019.
Prior Publication US 2022/0274380 A1, Sep. 1, 2022
Int. Cl. B32B 17/10 (2006.01); B32B 7/025 (2019.01); B32B 27/20 (2006.01); B32B 27/30 (2006.01); B60J 1/00 (2006.01)
CPC B32B 17/10614 (2013.01) [B32B 7/025 (2019.01); B32B 17/10036 (2013.01); B32B 17/10761 (2013.01); B32B 27/20 (2013.01); B32B 27/30 (2013.01); B32B 2250/05 (2013.01); B32B 2250/40 (2013.01); B32B 2264/1023 (2020.08); B32B 2305/30 (2013.01); B32B 2307/204 (2013.01); B32B 2307/732 (2013.01); B32B 2315/08 (2013.01); B32B 2329/06 (2013.01); B32B 2605/006 (2013.01); B32B 2605/08 (2013.01); B60J 1/001 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A laminated glass comprising:
a first glass plate;
a second glass plate; and
an interlayer film held between the first glass plate and the second glass plate, wherein
the interlayer film includes, in a plan view of the first glass plate, a laminated region including a first layer that is in contact with the first glass plate, a second layer that is in contact with the second glass plate, and a third layer disposed between the first layer and the second layer, and
when a predetermined frequency in 60 to 100 GHz is expressed by F[GHz], and
when the relative dielectric constant of the first glass plate in the frequency F is denoted by εg1, the relative dielectric constant of the second glass plate in the frequency F is denoted by εg2, the relative dielectric constant of the first layer in the frequency F is denoted by εm1, the relative dielectric constant of the second layer in the frequency F is denoted by εm2, and the relative dielectric constant of the third layer in the frequency F is denoted by εm3, relationships
εm1<εg1, εm1<εg2,
εm2<εg1, εm2<εg2, and
εm3>εm1, εm3>εm2
are established.