CPC B24B 37/24 (2013.01) [B24B 37/107 (2013.01); B32B 3/10 (2013.01); B32B 3/12 (2013.01); C08J 9/26 (2013.01); C09G 1/02 (2013.01); B32B 5/00 (2013.01); C08L 53/00 (2013.01); C08L 75/04 (2013.01); C08L 77/00 (2013.01); C08L 81/06 (2013.01)] | 20 Claims |
1. A method of forming a chemical-mechanical polishing (CMP) pad, comprising:
forming a CMP top pad; and
combining the CMP top pad and a CMP sub-pad to form the CMP pad,
wherein the CMP top pad is configured to engage with a workpiece during a CMP process, and forming the CMP top pad comprises:
providing a solution of a block copolymer (BCP) on a support substrate, wherein the BCP includes a first segment and a second segment connected to the first segment, the second segment being different from the first segment in composition;
processing the BCP solution to form a polymer network having a first phase and a second phase embedded in the first phase, wherein the first phase includes the first segment and the second phase includes the second segment;
removing the second phase from the polymer network, thereby forming a polymer film that includes a network of pores embedded in the first phase; and
removing the polymer film from the support substrate.
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10. The method of claim 1,
wherein forming the CMP top pad further comprises removing a topmost portion and a bottommost portion of the polymer film; and
combining the CMP top pad and the CMP sup-pad comprises bonding the CMP top pad to the CMP sub-pad with an adhesive.
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