| CPC H01L 23/3121 (2013.01) [G01R 15/207 (2013.01); G01R 33/072 (2013.01); G01R 33/091 (2013.01); H01L 21/4817 (2013.01); H01L 21/4871 (2013.01); H01L 21/565 (2013.01); H01L 22/34 (2013.01); H01L 23/057 (2013.01); H01L 23/3675 (2013.01); H01L 23/3735 (2013.01); H01L 23/44 (2013.01); H01L 23/473 (2013.01); H01L 23/50 (2013.01); H01L 25/072 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H10N 50/10 (2023.02); H10N 52/00 (2023.02); G01R 33/0005 (2013.01); G01R 33/0017 (2013.01); H01L 23/051 (2013.01)] | 32 Claims |

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[ 22. A semiconductor module, comprising:
a semiconductor die;
a mold compound encasing the semiconductor die;
a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, a first one of the terminals haVing a constricted region covered by the mold compound; and
a recess formed in an exterior surface of the mold compound,
wherein the recess is aligned with the constricted region of the first terminal,
wherein the recess is shaped to receive a coreless magnetic field sensor,
wherein the mold compound isolates the constricted region of the first terminal from the recess. ]
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