US 12,356,877 B2
Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory device
Chang-Yong Nam, Stony Brook, NY (US); Ashwanth Subramanian, Tualatin, OR (US); Nikhil Tiwale, Medford, NY (US); and Kim Kisslinger, Manorville, NY (US)
Assigned to Brookhaven Science Associates, LLC, Upton, NY (US); and The Research Foundation for The State University of New York, Albany, NY (US)
Filed by Brookhaven Science Associates, LLC, Upton, NY (US); and The Research Foundation for The State University of New York, Albany, NY (US)
Filed on Jun. 30, 2022, as Appl. No. 17/854,529.
Claims priority of provisional application 63/217,367, filed on Jul. 1, 2021.
Prior Publication US 2023/0006133 A1, Jan. 5, 2023
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/881 (2023.02) [H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/245 (2023.02); H10N 70/8416 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A resistive random access memory (RRAM) device, comprising:
a plurality of memory cells, each of at least a subset of the memory cells comprising:
a first electrode formed on a substrate;
an organic thin film compound mixed with silver perchlorate (AgClO4) salt as a base layer that is incorporated with an amount of inorganic metal oxide molecules, the base layer being formed on at least a portion of an upper surface of the first electrode; and
a second electrode formed on at least a portion of an upper surface of the base layer;
wherein resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClO4 salt in the base layer; and
wherein variation of device switching parameters is controlled as a function of the amount of inorganic metal oxide molecules infiltrated in the base layer.
 
7. A resistive random access memory (RRAM) array, comprising:
a plurality of memory cells, each of at least a subset of the memory cells comprising a nanocomposite thin film layer of SU-8:AgClO4 as a matrixed base layer that is infiltrated with inorganic metal oxide molecules, wherein the inorganic metal oxide molecules form a network in the matrixed base layer that is configured to control resistive switching characteristics as a function of corresponding changes in a concentration of AgClO4 salt in the matrixed base layer to meet prescribed switching parameters of the RRAM device, and wherein a variation of switching parameters associated with the RRAM device is controlled as a function of an amount of metal oxide molecules in the matrixed SU-8:AgClO4 base layer.
 
10. A method for forming a resistive random access memory (RRAM) cell, the method comprising:
forming a first electrode on at least a portion of an upper surface of a substrate;
forming an organic thin film compound mixed with silver perchlorate (AgClO4) salt as a base layer on at least a portion of an upper surface of the first electrode;
incorporating the base layer with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI);
forming a second electrode on at least a portion of an upper surface of the base layer;
controlling resistive switching characteristics of the RRAM cell as a function of a concentration of AgClO4 salt in the base layer; and
controlling a variation of device switching parameters as a function of an amount of infiltrated metal oxide molecules in the base layer.
 
18. A memory device for low-power neuromorphic computing applications, the memory device comprising:
a plurality of resistive random access memory (RRAM) cells, each of at least a subset of the RRAM cells including a SU-8:AgClO4 matrix base layer configured to regulate resistive switching characteristics in the cell by changing a quantity of AgClO4 salt concentration in the SU-8:AgClO4 matrix base layer, wherein variation of switching parameters of the plurality of RRAM cells is reduced by incorporating a molecular AlOx network in the SU-8:AgClO4 matrix base layer.