US 12,356,876 B2
Memory device and formation method thereof
Chao-I Wu, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 22, 2024, as Appl. No. 18/671,947.
Application 18/671,947 is a continuation of application No. 16/919,071, filed on Jul. 1, 2020, granted, now 12,029,143.
Claims priority of provisional application 62/968,157, filed on Jan. 31, 2020.
Prior Publication US 2024/0315153 A1, Sep. 19, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8613 (2023.02) [H10N 70/231 (2023.02); H10N 70/8413 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a phase change layer, configured to store multilevel data; and
a heater, comprising heat conducting materials having different resistivities and respectively in contact with the phase change layer, wherein a first heat conducting material of the heat conducting materials is formed in a recess shape, a second heat conducting material of the heat conducting materials is filled in a recess defined by the first heat conducting material, the heat conducting materials are formed of a metal nitride, a metal content in the first heat conducting material is greater than a metal content in the second heat conducting material, and a nitrogen content in the first heat conducting material is less than a nitrogen content in the second heat conducting material.