US 12,356,870 B2
Memory device
Yen-Lin Huang, Menlo Park, CA (US); Ming-Yuan Song, Hsinchu (TW); Chien-Min Lee, Hsinchu County (TW); and Shy-Jay Lin, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 19, 2023, as Appl. No. 18/355,385.
Application 18/355,385 is a continuation of application No. 17/355,146, filed on Jun. 22, 2021, granted, now 11,765,984.
Claims priority of provisional application 63/156,949, filed on Mar. 5, 2021.
Prior Publication US 2023/0363290 A1, Nov. 9, 2023
Int. Cl. H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01)
CPC H10N 52/80 (2023.02) [H10B 61/22 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a spin hall electrode;
a magnetic tunneling junction (MTJ) disposed beside the spin hall electrode and comprising:
a synthetic free layer comprising a synthetic antiferromagnetic structure, a first exchange coupling layer and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin hall electrode and the free layer, and the synthetic antiferromagnetic structure is configured to alter a magnetization direction of the free layer;
a reference layer disposed beside the synthetic free layer; and
a barrier layer disposed between the synthetic free layer and the reference layer; and;
a diffusion barrier lying between the MTJ and the spin hall electrode, wherein the diffusion barrier is formed of a non-magnetic conductive material.