CPC H10N 52/80 (2023.02) [H10B 61/22 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02)] | 20 Claims |
1. A memory device, comprising:
a spin hall electrode;
a magnetic tunneling junction (MTJ) disposed beside the spin hall electrode and comprising:
a synthetic free layer comprising a synthetic antiferromagnetic structure, a first exchange coupling layer and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin hall electrode and the free layer, and the synthetic antiferromagnetic structure is configured to alter a magnetization direction of the free layer;
a reference layer disposed beside the synthetic free layer; and
a barrier layer disposed between the synthetic free layer and the reference layer; and;
a diffusion barrier lying between the MTJ and the spin hall electrode, wherein the diffusion barrier is formed of a non-magnetic conductive material.
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