| CPC H10K 39/32 (2023.02) [H10K 39/34 (2023.02); H10K 59/65 (2023.02)] | 8 Claims |
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1. A display device, comprising:
a display unit including a plurality of display pixels and a plurality of sensor pixels;
a plurality of drivers configured to apply signals to drive the plurality of display pixels and the plurality of sensor pixels; and
a signal controller configured to control the plurality of drivers,
wherein each separate pixel of the plurality of display pixels and the plurality of sensor pixels includes a separate plurality of transistors,
wherein each separate plurality of transistors includes
at least one transistor that includes a silicon semiconductor layer, and
at least one other transistor that includes an oxide semiconductor layer,
wherein the plurality of sensor pixels and the plurality of display pixels are arranged in a pattern in the display unit,
wherein each of the plurality of display pixels displays one of red, blue, or green,
wherein
one sensor pixel is between two adjacent display pixels in the display unit in a first direction, the first direction extending perpendicular to first facing sidewalls of the two adjacent display pixels, such that the first facing sidewalls each extend in a second direction, the second direction perpendicular to the first direction,
a first direction distance in the first direction between the first facing sidewalls of the two adjacent display pixels and through the one sensor pixel therebetween is less than a first direction length of one display pixel of the two adjacent display pixels in the first direction,
the display unit does not include any sensor pixels between second facing sidewalls of two adjacent display pixels in the display unit in the second direction, the second facing sidewalls each extending in the first direction, and
wherein in a planar view, the one sensor pixel is smaller in both the first direction, and the second direction than the two adjacent display pixels,
wherein each display pixel includes
a first display pixel transistor including a gate connected to a first node, a source connected to a second node, and a drain connected to a third node,
a second display pixel transistor including a gate connected to a first scan line, a source connected to a data line, and a drain connected to the second node,
a third display pixel transistor including a gate connected to a second scan line, and respective ends connected to the gate of the first display pixel transistor and the drain of the first display pixel transistor,
a fourth display pixel transistor including a gate connected to a third scan line, a source connected to an initialization voltage supply line, and a drain connected to the first node,
a fifth display pixel transistor including a gate connected to a light emission control line, a source connected to a supply line of a first power source voltage, and a drain connected to the second node,
a sixth display pixel transistor including a gate connected to the light emission control line, a source connected to the third node, and a drain connected to an anode of an organic light emitting diode,
a storage capacitor including one electrode connected to the first node and another electrode connected to the supply line of the first power source voltage, and
a seventh display pixel transistor including a gate connected to a fourth scan line, a source connected to the anode of the organic light emitting diode, and a drain connected to the initialization voltage supply line,
wherein at least one of the third display pixel transistor or the fourth display pixel transistor includes the oxide semiconductor layer,
wherein the first, second, fifth, sixth, and seventh display pixel transistors include respective silicon semiconductor layers, and
wherein
the plurality of sensor pixels further include separate, respective organic photodiodes,
the separate plurality of transistors included in each separate sensor pixel of the plurality of sensor pixels includes
a first transistor connected to a cathode of the organic photodiode of the separate sensor pixel, a first driving voltage line, and a readout line, and
a second transistor connected to a reset signal line, the first driving voltage line, and the cathode of the organic photodiode of the separate sensor pixel,
wherein the first transistor includes the silicon semiconductor layer,
wherein the second transistor includes the oxide semiconductor layer,
wherein the second transistor includes a first gate electrode and a second gate electrode.
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