US 12,356,784 B2
Stacked cell and preparation method thereof
Xiaobing Ding, Changzhou (CN); Guangtao Yang, Changzhou (CN); Rui Xia, Changzhou (CN); Yiqi Chen, Changzhou (CN); Xueling Zhang, Changzhou (CN); and Daming Chen, Changzhou (CN)
Assigned to TRINA SOLAR CO., LTD., Changzhou (CN)
Filed by TRINA SOLAR CO., LTD., Changzhou (CN)
Filed on Jul. 10, 2024, as Appl. No. 18/768,878.
Claims priority of application No. 202311518066.5 (CN), filed on Nov. 15, 2023.
Prior Publication US 2024/0373659 A1, Nov. 7, 2024
Int. Cl. H10K 39/12 (2023.01); H10K 39/15 (2023.01)
CPC H10K 39/12 (2023.02) [H10K 39/15 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A stacked cell comprising:
a crystalline silicon cell;
a conductive connecting layer located on a surface of the crystalline silicon cell;
a first isolation layer extending from a surface of the conductive connecting layer facing away from the crystalline silicon cell to penetrate through the conductive connecting layer, the first isolation layer being made of an insulating material, and the first isolation layer being located inside the conductive connecting layer, and the first isolation layer being configured to reduce a transverse transport of carriers in the conductive connecting layer on both sides of the first isolation layer; and
a perovskite cell located on the surface of the conductive connecting layer facing away from the crystalline silicon cell; and
wherein the crystalline silicon cell comprises:
a substrate having a first conductivity type;
a first doped layer located on a side of the substrate facing away from the conductive connecting layer, the first doped layer having a second conductivity type;
a bottom transparent conductive layer located on a surface of the first doped layer facing away from the substrate; and
a second isolation layer extending from a surface of the bottom transparent conductive layer facing away from the first doped layer to penetrate through the bottom transparent conductive layer, the second isolation layer being made of an insulating material, and the second isolation layer being located inside the bottom transparent conductive layer.