US 12,356,779 B2
Display unit, display module, electronic device, and method for manufacturing the display unit
Shunpei Yamazaki, Setagaya (JP); Koji Kusunoki, Isehara (JP); and Hiroki Adachi, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/772,195
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Nov. 9, 2020, PCT No. PCT/IB2020/060504
§ 371(c)(1), (2) Date Apr. 27, 2022,
PCT Pub. No. WO2021/099880, PCT Pub. Date May 27, 2021.
Claims priority of application No. 2019-210638 (JP), filed on Nov. 21, 2019.
Prior Publication US 2022/0406981 A1, Dec. 22, 2022
Int. Cl. H10H 20/857 (2025.01); G06F 3/044 (2006.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/831 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/857 (2025.01) [G06F 3/044 (2013.01); H10H 20/01335 (2025.01); H10H 20/825 (2025.01); H10H 20/8312 (2025.01); H10H 29/142 (2025.01); G06F 2203/04103 (2013.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A display unit comprising a transistor, a light-emitting diode, a first conductive layer, a second conductive layer, a first insulating layer, a second insulating layer, a third insulating layer, and a fourth insulating layer,
wherein the transistor is electrically connected to the first conductive layer,
wherein the first conductive layer is positioned over the transistor,
wherein the first insulating layer is positioned over the transistor,
wherein the second conductive layer is positioned over the first conductive layer,
wherein the second insulating layer is positioned over the first insulating layer,
wherein the third insulating layer is positioned over the transistor and under the first insulating layer,
wherein the fourth insulating layer is positioned over and in contact with the second insulating layer and under the light-emitting diode,
wherein each of the first insulating layer and the second insulating layer comprises silicon oxide,
wherein each of the third insulating layer and the fourth insulating layer comprises at least one of aluminum oxide, hafnium oxide, and silicon nitride,
wherein the transistor comprises a metal oxide layer including a channel formation region,
wherein the light-emitting diode comprises a first electrode over the fourth insulating layer, a light-emitting layer over the first electrode, and a second electrode over the light-emitting layer,
wherein the second electrode is electrically connected to the second conductive layer,
wherein the height of a surface of the first conductive layer on the second conductive layer side is the same as the height of a surface of the first insulating layer on the second insulating layer side,
wherein the first insulating layer and the second insulating layer are directly bonded to each other, and
wherein the second conductive layer is positioned in a first opening in the second insulating layer and is electrically connected to the first conductive layer.