US 12,356,768 B2
Optoelectronic component and method for producing an optoelectronic component
Matthias Hien, Kirchroth (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/627,979
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Aug. 10, 2020, PCT No. PCT/EP2020/072416
§ 371(c)(1), (2) Date Jan. 18, 2022,
PCT Pub. No. WO2021/028396, PCT Pub. Date Feb. 18, 2021.
Claims priority of application No. 10 2019 121 881.0 (DE), filed on Aug. 14, 2019.
Prior Publication US 2022/0262988 A1, Aug. 18, 2022
Int. Cl. H10H 20/85 (2025.01); H10H 20/81 (2025.01)
CPC H10H 20/8506 (2025.01) [H10H 20/81 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic component comprising
at least one first semiconductor emitter and at least one second semiconductor emitter, each with an active region configured to generate electromagnetic radiation, and each with a front side coupling out area,
a radiation-impermeable cover layer, and
a carrier, wherein
the semiconductor emitters are arranged on a first side of the carrier,
the first semiconductor emitter is configured to emit electromagnetic radiation in a first wavelength range through its coupling out area and its coupling out area faces away from the carrier,
the second semiconductor emitter is configured to emit electromagnetic radiation in a second wavelength range through its coupling out area and its coupling out area faces away from the carrier,
the first and second wavelength ranges are at least partially different from each other,
the cover layer is formed with a photopolymer, is arranged on the first side of the carrier and comprises a coupling out window which completely penetrates the cover layer and in which the coupling out areas are each at least partially free of the cover layer, and
the cover layer is configured to reflect at least a major part of the radiation emitted by the semiconductor emitters.