US 12,356,766 B2
Display device using semiconductor light-emitting element seated in plurality of cells of barrier rib portion
Jinhyung Lee, Seoul (KR); Changseo Park, Seoul (KR); Younho Heo, Seoul (KR); Kisu Kim, Seoul (KR); and Seongmin Moon, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/780,880
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Dec. 18, 2019, PCT No. PCT/KR2019/017954
§ 371(c)(1), (2) Date May 27, 2022,
PCT Pub. No. WO2021/117956, PCT Pub. Date Jun. 17, 2021.
Claims priority of application No. 10-2019-0164885 (KR), filed on Dec. 11, 2019.
Prior Publication US 2023/0015395 A1, Jan. 19, 2023
Int. Cl. H10H 20/831 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/8312 (2025.01) [H01L 25/0753 (2013.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A display device comprising:
a base portion;
a first electrode formed on the base portion;
a barrier rib portion stacked on the first electrode while forming a plurality of cells;
a second electrode formed on the barrier rib portion; and
semiconductor light emitting diodes seated in the plurality of cells,
wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween,
wherein each semiconductor light emitting diode includes:
a first conductivity type electrode;
a first conductivity type semiconductor layer formed on the first conductivity type electrode;
an active layer formed on the first conductivity type semiconductor layer;
a second conductivity type semiconductor layer formed on the active layer; and
a second conductivity type electrode formed on the second conductivity type semiconductor layer, and
wherein at least the first electrode is electrically connected to one of the first conductivity type electrode and the second conductivity type electrode.