US 12,356,761 B2
Light emitting device
Ayush Pandey, Ann Arbor, MI (US); and Zetian Mi, Ann Arbor, MI (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US)
Filed by THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Office of Technology Transfer, Ann Arbor, MI (US)
Filed on Jun. 13, 2022, as Appl. No. 17/839,268.
Claims priority of provisional application 63/210,440, filed on Jun. 14, 2021.
Prior Publication US 2024/0405160 A1, Dec. 5, 2024
Int. Cl. H01L 33/24 (2010.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/816 (2025.01) [H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/8215 (2025.01); H10H 20/825 (2025.01)] 21 Claims
OG exemplary drawing
 
1. An ultra-violet (UV) light emitting device comprising:
a graded p-doped region, with a higher concentration of p-dopants towards one side of the p-doped region and a lower concentration of p-dopants towards an opposite side of the p-doped region;
an active region, wherein at least two charge confinement structures within the active region are not uniform, wherein the active region includes quantum well heterostructures with barrier layer thicknesses varying from then-doped region to the p-doped region in a configuration that enhances hole injection and transport; and
a n-doped region.