US 12,356,759 B2
High voltage light-emitting device
Ling-Yuan Hong, Fujian (CN); Qing Wang, Fujian (CN); Dazhong Chen, Fujian (CN); Quanyang Ma, Fujian (CN); Su-Hui Lin, Fujian (CN); and Chung-Ying Chang, Fujian Province (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD, Xiamen (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian Province (CN)
Filed on Jun. 3, 2024, as Appl. No. 18/732,430.
Application 18/732,430 is a continuation of application No. 17/530,205, filed on Nov. 18, 2021, granted, now 12,021,166.
Claims priority of application No. 202011600585.2 (CN), filed on Dec. 29, 2020.
Prior Publication US 2024/0322075 A1, Sep. 26, 2024
Int. Cl. H10H 29/14 (2025.01); H10H 20/813 (2025.01); H10H 20/84 (2025.01); H10H 20/831 (2025.01); H10H 20/833 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/813 (2025.01) [H10H 20/84 (2025.01); H10H 29/142 (2025.01); H10H 20/8312 (2025.01); H10H 20/833 (2025.01); H10H 20/857 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
a substrate;
a plurality of light-emitting units that are disposed on said substrate and that are spaced apart from each other by an isolation trench, two of said light-emitting units being adjacent to each other but not in direct electrical connection with each other, each of said light-emitting units including a light-emitting stack, and a light-transmissible current spreading layer that covers at least a part of said light-emitting stack;
an interconnect structure that extends across said isolation trench to electrically interconnect said light-emitting units, said interconnect structure that does not extend across a portion of said isolation trench that is located between said two of said light-emitting units which are adjacent to each other but not in direct electrical connection with each other; and
an insulating layer that covers said light-transmissible current spreading layers of said light-emitting units and at least a part of said light-emitting stacks of said light-emitting units, and that has a thickness ranging from 200 nm to 450 nm.