US 12,356,749 B2
Image sensor device
Yun-Wei Cheng, Taipei (TW); Chun-Hao Chou, Tainan (TW); Kuo-Cheng Lee, Tainan (TW); and Hsun-Ying Huang, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 16, 2023, as Appl. No. 18/487,216.
Application 16/595,729 is a division of application No. 15/807,980, filed on Nov. 9, 2017, granted, now 10,468,444, issued on Nov. 5, 2019.
Application 18/487,216 is a continuation of application No. 17/397,049, filed on Aug. 9, 2021, granted, now 11,824,073.
Application 17/397,049 is a continuation of application No. 16/595,729, filed on Oct. 8, 2019, granted, now 11,088,188, issued on Aug. 10, 2021.
Prior Publication US 2024/0038804 A1, Feb. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/8057 (2025.01) [H10F 39/014 (2025.01); H10F 39/024 (2025.01); H10F 39/026 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01); H10F 39/182 (2025.01); H10F 39/805 (2025.01); H10F 39/8067 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a first side and a second side opposite the first side;
a first isolation structure extending from the first side into the substrate; and
a second isolation structure extending into the substrate, from the second side to the first isolation structure in a direction, wherein the second isolation structure has an end portion in the first isolation structure and separated from the first side in the direction by the first isolation structure.