US 12,356,747 B2
Image capturing element, manufacturing method, and electronic device
Hironori Hoshi, Kanagawa (JP); Atsushi Okuyama, Kanagawa (JP); and Itaru Oshiyama, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/291,184
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed Oct. 23, 2019, PCT No. PCT/JP2019/041454
§ 371(c)(1), (2) Date Feb. 1, 2022,
PCT Pub. No. WO2020/095674, PCT Pub. Date May 14, 2020.
Claims priority of application No. 2018-207880 (JP), filed on Nov. 5, 2018.
Prior Publication US 2022/0223642 A1, Jul. 14, 2022
Int. Cl. H10F 39/12 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/8057 (2025.01) [H10F 39/024 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8063 (2025.01)] 9 Claims
OG exemplary drawing
 
1. An image capturing element comprising:
a semiconductor substrate in which photoelectric conversion parts that photoelectrically convert emitted light are formed;
a trench part provided from a light-receiving surface side of the semiconductor substrate and between a plurality of the photoelectric conversion parts; and
a protrusion part provided with at least an inclined surface that is inclined with respect to a side surface of the trench part to widen a space of the trench part in one part of the trench part, wherein
a material that inhibits transmission of light is embedded in the trench part and the protrusion part,
a first material embedded in a projection part of the protrusion part projecting laterally from a side surface of the trench part, and a second material embedded inside the trench part other than the projection part have different characteristics,
the first material has a higher absorption coefficient to light than the second material, and
the second material has a higher reflectance to light than the first material.