US 12,356,739 B2
Solid-state imaging device and electronic device
Yuki Kawahara, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Oct. 17, 2023, as Appl. No. 18/381,019.
Application 18/381,019 is a continuation of application No. 17/438,864, granted, now 11,855,105, previously published as PCT/JP2020/011455, filed on Mar. 16, 2020.
Claims priority of application No. 2019-067588 (JP), filed on Mar. 29, 2019.
Prior Publication US 2024/0047486 A1, Feb. 8, 2024
Int. Cl. H10F 39/00 (2025.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01); H10F 30/225 (2025.01); H10F 39/12 (2025.01)
CPC H10F 39/802 (2025.01) [H04N 25/77 (2023.01); H04N 25/78 (2023.01); H10F 39/024 (2025.01); H10F 39/8033 (2025.01); H10F 39/8057 (2025.01); H10F 30/225 (2025.01); H10F 39/199 (2025.01); H10F 39/807 (2025.01); H10F 39/809 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a first semiconductor substrate, wherein the first semiconductor substrate includes a first surface and a second surface opposite the first surface;
a plurality of photoelectric conversion elements, wherein each photoelectric conversion element of the plurality of photoelectric conversion elements includes a photoelectric conversion region disposed in the first semiconductor substrate;
a plurality of element isolation portions, wherein the element isolation portions are disposed in a grid-shaped first trench penetrating the first semiconductor substrate from a first surface of the first semiconductor substrate, wherein the element isolation portions define a plurality of element regions, and wherein each photoelectric conversion element is disposed in a corresponding one of the element regions; and
a plurality of first contacts,
wherein more than one first contact of the plurality of first contacts are disposed in each of the element regions,
wherein each of the photoelectric conversion elements includes a second contact, and,
wherein, for each of the photoelectric conversion elements, the plurality of first contacts are at a first distance from the second surface of the first semiconductor substrate and the second contact is at a second distance from the second surface of the first semiconductor substrate.