| CPC H10F 39/802 (2025.01) [H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/8057 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] | 27 Claims |
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1. A semiconductor apparatus comprising a semiconductor layer having a plurality of pixels arranged in a matrix form and a light shielded portion, and having a front surface and a back surface,
wherein one of the plurality of pixels includes a plurality of photodiodes disposed in the semiconductor layer,
wherein nine sections, obtained by dividing a light receiving region of the one pixel on the back surface of the semiconductor layer into three equal sections in each of row and column directions, include a first section and eight sections (including a second section, a third section, a fourth section, a fifth section, a sixth section, a seventh section, an eighth section, and a ninth section), and the first section is positioned between the second and third sections and between the fourth and fifth sections,
wherein a first photoelectric conversion member included in a certain photodiode of the plurality of photodiodes is disposed at a position overlapping with the first section in a direction perpendicular to the back surface,
wherein a second photoelectric conversion member included in a photodiode different from the certain photodiode is disposed at a position overlapping with the second section in the direction perpendicular to the back surface,
wherein a third photoelectric conversion member included in a photodiode different from the certain photodiode is disposed at a position overlapping with the third section in the direction perpendicular to the back surface,
wherein a plurality of electrodes each forming a Metal-Insulator-Semiconductor (MIS) structure together with the semiconductor layer is disposed on the front surface of the semiconductor layer,
wherein at least one of the plurality of electrodes overlaps with at least one of the eight sections in the direction perpendicular to the back surface, and
wherein at least one of the electrodes associated with the one pixel out of the plurality of electrodes and an element region of the semiconductor layer forming the MIS structure is disposed in a region overlapping with the light shielded portion in a direction perpendicular to the front surface,
wherein the plurality of electrodes includes a first transfer electrode for transferring electric charges generated in the first photoelectric conversion member to an electric charge storage portion disposed in the semiconductor layer and a second transfer electrode for transferring electric charges generated in the second photoelectric conversion member to the electric charge storage portion, and
wherein the electric charge storage portion is arranged between the first transfer electrode and the second transfer electrode in the direction perpendicular to the front surface.
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