US 12,356,735 B2
Light receiving element and light receiving apparatus
Yuhi Yorikado, Kanagawa (JP); Yoshiki Ebiko, Kanagawa (JP); Suzunori Endo, Kanagawa (JP); Nobuhiro Kawai, Kanagawa (JP); Fumihiko Koga, Kanagawa (JP); Nobuo Nakamura, Kanagawa (JP); Sozo Yokogawa, Kanagawa (JP); and Hayato Wakabayashi, Tokyo (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/781,666
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Dec. 3, 2020, PCT No. PCT/JP2020/044962
§ 371(c)(1), (2) Date Jun. 1, 2022,
PCT Pub. No. WO2021/117589, PCT Pub. Date Jun. 17, 2021.
Claims priority of application No. 2019-225912 (JP), filed on Dec. 13, 2019; and application No. 2020-166859 (JP), filed on Oct. 1, 2020.
Prior Publication US 2022/0375969 A1, Nov. 24, 2022
Int. Cl. H10F 39/10 (2025.01); G01S 7/481 (2006.01); G01S 7/4863 (2020.01)
CPC H10F 39/103 (2025.01) [G01S 7/4811 (2013.01); G01S 7/4863 (2013.01); H10F 39/107 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A light receiving element, comprising:
a photoelectric conversion unit that is provided in a semiconductor substrate and converts light into a charge;
a first charge accumulation unit to which the charge is transferred from the photoelectric conversion unit;
a second charge accumulation unit to which the charge is transferred from the photoelectric conversion unit;
a first transfer transistor that transfers the charge transferred to the first charge accumulation unit; and
a second transfer transistor that transfers the charge transferred to the second charge accumulation unit,
wherein each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer,
wherein the first insulating layer is made of a first oxide film,
wherein each of the first transfer transistor and the second transfer transistor includes a second oxide film provided on the semiconductor substrate, and
wherein the first oxide film has a film thickness thinner than a film thickness of the second oxide film.