US 12,356,733 B2
Avalanche photodiode structure
Chee Hing Tan, Sheffield (GB)
Assigned to PHLUX TECHNOLOGY LIMITED, (GB)
Appl. No. 17/777,775
Filed by PHLUX TECHNOLOGY LIMITED, Sheffield (GB)
PCT Filed Nov. 18, 2020, PCT No. PCT/GB2020/052930
§ 371(c)(1), (2) Date May 18, 2022,
PCT Pub. No. WO2021/099769, PCT Pub. Date May 27, 2021.
Claims priority of application No. 1916784 (GB), filed on Nov. 18, 2019; and application No. 2015674 (GB), filed on Oct. 2, 2020.
Prior Publication US 2022/0416110 A1, Dec. 29, 2022
Int. Cl. H10F 30/225 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01)
CPC H10F 30/2255 (2025.01) [H10F 77/1248 (2025.01); H10F 77/1468 (2025.01)] 27 Claims
OG exemplary drawing
 
1. An avalanche photodiode (APD) structure, comprising:
an absorption layer comprising InGaAs, InGaAlAs, InGaAsP, or an InGaAs/GaAsSb type-II superlattice;
an avalanche layer comprising AlGaAsSb; and
a transition portion disposed between the absorption layer and the avalanche layer;
wherein the transition portion comprises a first grading layer of InAlGaAs or InGaAsP and a first field control layer disposed between the first grading layer and the avalanche layer; and
wherein the first field control layer has a bandgap between the bandgap of the absorption layer and the bandgap of the avalanche layer.