| CPC H10F 19/904 (2025.01) [H10F 71/00 (2025.01)] | 8 Claims |
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1. A method for forming a conductive interconnection comprising:
forming a semiconductor stack over a first contact;
forming a first conductive layer over the semiconductor stack; and
ablating a shaped region of the first conductive layer from the semiconductor stack, wherein a conductive island is formed from the first conductive layer and demarcated by the shaped region;
forming a dielectric layer over the first conductive layer;
forming a passage through the conductive island of the first conductive layer, the passage extending through the dielectric layer, the conductive island of the first conductive layer, and the semiconductor stack; and
filling the passage, at least partially, with an interconnect that forms an electrical connection with the first contact.
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