| CPC H10D 89/911 (2025.01) [H03K 17/56 (2013.01); H10D 89/611 (2025.01); H10D 89/814 (2025.01)] | 22 Claims |
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1. A semiconductor device, comprising:
a semiconductor body comprising an active region and a substrate region that is disposed beneath the active region;
a bidirectional switch formed in the semiconductor body and comprising first and second gate structures that are each configured to control a conductive state of an electrically conductive channel that is disposed in the active region, and first and second input-output terminals that are each in ohmic contact with the electrically conductive channel; and
a passive substrate voltage discharge circuit in parallel with the bidirectional switch and configured to discharge a voltage of the substrate region in both directions of the bidirectional switch, the passive substrate voltage discharge circuit comprising first and second normally-on switches connected in anti-series between the first and second input-output terminals in a common source configuration with the substrate region as a midpoint,
wherein the first normally-on switch has a drain terminal electrically connected to the first input-output terminal of the bidirectional switch, a source terminal electrically connected to the substrate region, and a gate terminal electrically connected to the substrate region,
wherein the second normally-on switch has a drain terminal electrically connected to the second input-output terminal of the bidirectional switch, a source terminal electrically connected to the substrate region, and a gate terminal electrically connected to the substrate region,
wherein the passive substrate voltage discharge circuit comprises:
a first voltage clamp circuit that electrically connects the source terminal of the first normally-on switch to the substrate region; and
a second voltage clamp circuit that electrically connects the source terminal of the second normally-on switch to the substrate region.
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