| CPC H10D 84/0158 (2025.01) [H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01)] | 20 Claims |
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1. A method for forming a semiconductor device structure, comprising:
forming a dielectric layer over a substrate, wherein the substrate has a base and a fin structure over the base, and the dielectric layer is over the base and surrounds the fin structure;
forming a gate stack over the fin structure and the dielectric layer, wherein the gate stack is wrapped around an upper portion of the fin structure;
removing portions of the dielectric layer, which are not covered by the gate stack;
forming first spacers over first sidewalls of the gate stack after removing the portions of the dielectric layer, which are not covered by the gate stack;
forming second spacers over second sidewalls of the fin structure after removing the portions of the dielectric layer, which are not covered by the gate stack;
partially removing the fin structure, which is not covered by the gate stack and the first spacers; and
forming a source/drain structure over the fin structure, which is not covered by the gate stack and the first spacers, wherein the second spacer is thinner than the dielectric layer.
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