US 12,356,692 B2
Nitride semiconductor device
Akira Yoshioka, Yokohama Kanagawa (JP); and Toru Sugiyama, Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/683,107.
Claims priority of application No. 2021-152133 (JP), filed on Sep. 17, 2021.
Prior Publication US 2023/0091984 A1, Mar. 23, 2023
Int. Cl. H10D 64/00 (2025.01); H01L 23/522 (2006.01); H10D 30/47 (2025.01); H10D 64/23 (2025.01)
CPC H10D 64/111 (2025.01) [H01L 23/5222 (2013.01); H01L 23/5228 (2013.01); H10D 30/475 (2025.01); H10D 64/251 (2025.01)] 20 Claims
OG exemplary drawing
 
15. A nitride semiconductor device, comprising:
a conductive substrate;
a nitride semiconductor layer on the substrate;
first and second pads disposed above the semiconductor layer and connected to the semiconductor layer;
first and second electrodes respectively connected to the first and second pads and extending on the semiconductor layer;
a first control electrode extending between the first and second electrodes;
a guard ring disposed on the semiconductor layer, connected to the substrate, and surrounding a region in which the first and second pads, the first and second electrodes, and the first control electrode are disposed; and
third and fourth electrodes extending from the guard ring into the region and facing the first and second pads.