US 12,356,677 B2
Semiconductor device and method for fabricating the same
Shih-Hsien Huang, Kaohsiung (TW); Sheng-Hsu Liu, Changhua County (TW); and Wen Yi Tan, Fujian (CN)
Assigned to United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed by United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed on Apr. 10, 2023, as Appl. No. 18/132,966.
Application 18/132,966 is a continuation of application No. 16/914,503, filed on Jun. 29, 2020, granted, now 11,658,229.
Claims priority of application No. 202010472945.9 (CN), filed on May 29, 2020.
Prior Publication US 2023/0246090 A1, Aug. 3, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01)
CPC H10D 62/021 (2025.01) [H10D 30/0227 (2025.01); H10D 30/601 (2025.01); H10D 62/151 (2025.01); H10D 64/015 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate structure on a substrate;
a spacer adjacent to the gate structure;
an epitaxial layer adjacent to the spacer, wherein the epitaxial layer comprises a hexagon;
a protrusion having an angle greater than 30 degrees and less than 90 degrees under the spacer and adjacent to the hexagon and contacting a bottom surface of the spacer directly, wherein the protrusion is made of a single material and the protrusion and the epitaxial layer are made of same material; and
a cap layer on the epitaxial layer.