US 12,356,676 B2
Device comprising electrostatic control gates distributed on two opposite faces of a semiconductor portion
Thomas Bedecarrats, Grenoble (FR); Jean Charbonnier, Grenoble (FR); Maud Vinet, Grenoble (FR); Hélène Jacquinot, Grenoble (FR); Yann-Michel Niquet, Grenoble (FR); and Candice Thomas, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Jan. 18, 2022, as Appl. No. 17/577,551.
Claims priority of application No. 21 00454 (FR), filed on Jan. 18, 2021.
Prior Publication US 2022/0271151 A1, Aug. 25, 2022
Int. Cl. H10D 48/00 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01)
CPC H10D 48/383 (2025.01) [H10D 30/031 (2025.01); H10D 30/6734 (2025.01); H10D 48/385 (2025.01); H10D 64/01 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A spin qubit quantum device, comprising:
a semiconductor portion comprising at least one first region disposed between at least two second regions and juxtaposed to the two second regions;
a first electrostatic control gate disposed in direct contact with the first region of the semiconductor portion, configured to control a minimum potential energy level in the first region, and comprising at least one first portion of electrically conductive material and at least one first gate dielectric disposed in direct contact with a first face of the semiconductor portion, between the first face and the first portion of electrically conductive material; and
second electrostatic control gates, each disposed in direct contact with one of the second regions of the semiconductor portion and configured to control a maximum potential energy level in one of the second regions, and each comprising at least one second portion of electrically conductive material and at least one second gate dielectric disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, between the second face and the second portion of electrically conductive material,
wherein each of the at least one first and at least two second regions contains only one layer configured to form a quantum dot;
wherein the semiconductor portion is a single portion of semiconductor material extending along a plane in the first direction; and
wherein, in a plane parallel to the first and second faces, a first straight line perpendicular to the first and second faces and passing through a center of the first electrostatic control gate is separated from each second straight line perpendicular to the first and second faces and passing through a center of one of the second electrostatic control gates by a non-zero distance d1.