US 12,356,670 B1
High mobility transistor with algan buffer layer
Ghada A. Khouqeer, Riyadh (SA); Arihant Raj Siddarth, Dehradun (IN); Gaurav Jayaswal, Bangalore (IN); Rahul Sharma, Mohali (IN); Yogita Sharma, Ahmedabad (IN); Priya Kaushal, Hamirpur (IN); Gargi Khanna, Hamirpur (IN); Tahani A. Alrebdi, Riyadh (SA); and Abdullah N. Alodhayb, Riyadh (SA)
Assigned to IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY, Riyadh (SA)
Filed by IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY, Riyadh (SA)
Filed on Jan. 17, 2025, as Appl. No. 19/027,364.
Application 19/027,364 is a continuation of application No. 18/916,467, filed on Oct. 15, 2024, granted, now 12,243,928, issued on Mar. 4, 2025.
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/47 (2025.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/85 (2025.01); H10D 64/64 (2025.01)
CPC H10D 30/675 (2025.01) [H01L 21/28581 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 30/6738 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 64/64 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT) with AlGaN buffer layer, comprising:
a silicon carbide (SiC) substrate;
an indium nitride (InN) nucleation layer deposited on the SiC substrate, wherein the InN nucleation layer has a thickness of about 5 nanometers;
an aluminum nitride (AlN) nucleation layer grown on the InN nucleation layer, wherein the AlN nucleation layer has a thickness of about 5 nanometers;
a first aluminum gallium nitride (AlGaN) buffer layer located on the AlN nucleation layer;
a gallium nitride (GaN) channel layer located on the first AlGaN buffer layer, wherein the first AlGaN buffer layer has an aluminum composition of about 51% and the GaN channel layer induces tensile strain on the AlGaN layer to provide piezoelectric polarization;
an aluminum source contact located over a first end of the GaN channel layer;
an aluminum drain contact located over a second end of the GaN channel layer;
a two dimensional molybdenum disulfide (MoS2) layer located over the GaN channel layer between the aluminum source contact and the aluminum drain contact, wherein the two dimensional MoS2 layer has a thickness of about 2 nanometers;
a second aluminum gallium nitride (AlGaN) buffer layer located over the two dimensional MoS2 layer between the aluminum source contact and the aluminum drain contact;
a p-type gallium nitride cap layer located on the second AlGaN buffer layer at a distance of about 1 micron from the aluminum source contact and about 6 microns from the aluminum drain contact; and
a platinum gate contact located on the p-type gallium nitride cap layer.