US 12,356,657 B2
Semiconductor device
Kanako Komatsu, Yokohama Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Feb. 22, 2022, as Appl. No. 17/677,578.
Application 17/677,578 is a division of application No. 16/702,790, filed on Dec. 4, 2019, abandoned.
Claims priority of application No. 2019-168401 (JP), filed on Sep. 17, 2019.
Prior Publication US 2022/0181486 A1, Jun. 9, 2022
Int. Cl. H10D 30/65 (2025.01); H10D 30/60 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/65 (2025.01) [H10D 30/603 (2025.01); H10D 30/66 (2025.01); H10D 62/115 (2025.01); H10D 62/116 (2025.01); H10D 62/124 (2025.01); H10D 62/151 (2025.01); H10D 64/111 (2025.01); H10D 64/519 (2025.01); H10D 64/516 (2025.01)] 1 Claim
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
an insulating member disposed inside the semiconductor substrate, an upper surface of the insulating member being exposed at an upper surface of the semiconductor substrate; and
an electrode provided on the semiconductor substrate and on the insulating member;
the insulating member including:
a plurality of first portions, and
a plurality of second portions thinner than the first portions;
the first portions and the second portions being arranged alternately one by one along a first direction,
an upper surface of one of the plurality of first portions being at the same height as an upper surface of one of the plurality of second portions in a vertical direction,
a lower surface of one of the plurality of first portions and a lower surface of one of the plurality of second portions directly physically contacting the semiconductor substrate, and
the semiconductor substrate including:
a source layer, and
a drain layer;
the source layer and the drain layer being arranged along a second direction crossing the first direction, and
the electrode is disposed directly above the plurality of first portions and directly above the plurality of second portions.