| CPC H10D 30/475 (2025.01) [H01L 21/26546 (2013.01); H01L 21/266 (2013.01); H01L 21/7605 (2013.01); H01L 21/761 (2013.01); H10D 30/015 (2025.01); H10D 62/111 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01)] | 8 Claims |
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1. A semiconductor device, comprising:
a first nitride-based semiconductor layer;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region;
a gate electrode disposed above the second nitride-based semiconductor layer; and
a doped nitride-based semiconductor layer disposed between the second nitride-based semiconductor layer and the gate electrode;
a source electrode and a drain electrode disposed above the second nitride-based semiconductor layer, wherein the gate electrode is located between the source and drain electrodes to define a drift region between the gate and drain electrodes; and
a group of negatively-charged ions implanted into the drift region and over the 2DEG region and spaced apart from the gate and drain electrodes and spaced apart from areas directly beneath the gate electrode and the doped nitride-based semiconductor layer and the drain electrode, wherein the gate electrode and the doped nitride-based semiconductor layer are closer to the negatively-charged ions than the drain electrode, such that the negatively-charged ions deplete at least one portion of the 2DEG region which is near the gate electrode;
wherein a distributed density of the group of negatively-charged ions in the second nitride-based semiconductor layer is non-uniform and increases and then decreases along a first direction pointing from a top surface to a bottom surface of the second nitride-based semiconductor layer.
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