US 12,356,640 B2
High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same
Jeonggyu Song, Seongnam-si (KR); Younsoo Kim, Yongin-si (KR); Jooho Lee, Hwaseong-si (KR); and Narae Han, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 17, 2023, as Appl. No. 18/512,648.
Application 18/512,648 is a continuation of application No. 17/146,894, filed on Jan. 12, 2021, granted, now 11,869,926.
Claims priority of application No. 10-2020-0111687 (KR), filed on Sep. 2, 2020.
Prior Publication US 2024/0088203 A1, Mar. 14, 2024
Int. Cl. H10D 1/68 (2025.01); H10B 12/00 (2023.01)
CPC H10D 1/684 (2025.01) [H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10D 1/692 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An electrical device comprising:
a lower electrode;
an upper electrode isolated from direct contact with the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode,
wherein the dielectric layer comprises
a first metal oxide area,
a second metal oxide area, and
a third metal oxide area between the first metal oxide area and the second metal oxide area,
wherein the third metal oxide area comprises boron (B) and at least one of Al, Mg, Si, or Be, such that a concentration of the boron in the dielectric layer, as measured from the lower electrode, at a position between 40% to 90% a thickness of the dielectric layer is greater than the concentration of the boron in the dielectric layer lower than the position between 40% to 90% the thickness of the dielectric layer.