US 12,356,633 B2
Semiconductor devices and method of forming the same
Hsiang-Ku Shen, Hsinchu (TW); Liang-Wei Wang, Hsinchu (TW); Dian-Hau Chen, Hsinchu (TW); and Yen-Ming Chen, Hsin-Chu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 5, 2023, as Appl. No. 18/347,536.
Application 18/347,536 is a continuation of application No. 17/364,862, filed on Jun. 30, 2021, granted, now 11,744,084.
Claims priority of provisional application 63/156,947, filed on Mar. 5, 2021.
Prior Publication US 2023/0354614 A1, Nov. 2, 2023
Int. Cl. H10B 61/00 (2023.01); H01L 21/762 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H10D 64/01 (2025.01)
CPC H10B 61/22 (2023.02) [H01L 21/76224 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H10D 64/01 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a gate structure over the substrate;
a source region and a drain region aside the gate structure;
a conductive via, disposed in the substrate; and
an isolation structure, disposed in the substrate, wherein a first surface of the isolation structure is substantially flush with a first surface of the conductive via, wherein the first surfaces of the isolation structure and the conductive via protrude from the substrate.